文档介绍：NIM B
Beam Interactions
with Materials & Atoms
Nuclear Instruments and Methods in Physics Research B 253 (2006) 250–254
ate/nimb
2-D simulation and analysis of temperature effects on
electrical parameters degradation of power RF LDMOS device
. Belaı¨d *, K. Ketata, M. Gares, J. Marcon, K. Mourgues, M. Masmoudi
LEMI, University of Rouen, IUT Rouen, 76821 Mont Saint Aignan, France
Available online 1 November 2006
Abstract
This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify
and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical characteristics is
discussed with regard to physical limits for device operation. A developed 2-D structure was implemented and simulated using the phys-
ical simulator Silvaco-Atlas to explain the observed data and offer insight into the physical origin of LDMOS temperature behaviour.
The temperature dependence of most important electrical parameters such as channel current Ids, threshold voltage Vth and inter-elec-
trodes capacitances (Cds, Cgs) is investigated. The temperature effects on mobility, electron concentration, electric field, current flow lines
and Fermi level are taken into account. Finally, initial failure analysis is discussed.
Ó 2006 Elsevier . All rights reserved.
Keywords: Si