文档介绍：Microelectronics Reliability 47 (2007) 1394–1399
ate/microrel
Study of hot-carrier effects on power RF LDMOS device reliability
M. Gares a,*, . Belaı¨d a, H. Maanane a, M. Masmoudi a, J. Marcon a,
K. Mourgues a, Ph. Eudeline b
a LEMI, University of Rouen, IUT Rouen, 76821, Mont Saint Aignan, France
b THALES Air Defence, ZI du Mont Jarret, 76520 Ymare, France
Received 10 July 2007
Available online 4 September 2007
Abstract
This paper parative reliability of the hot carrier induced electrical performance degradation in power RF LDMOS tran-
sistors after RF life-tests and novel methods for accelerated ageing tests under various conditions (electrical and/or thermal stress): ther-
mal shock tests (TST, air–air test) and thermal cycling tests (TCT, air–air test) under various conditions (with and without DC bias, TST
cold and hot, different channel current IDS and different extremes temperatures DT values). It is important to understand the effects of the
reliability degradation mechanisms on the S-parameters and in turn on static and dynamic parameters. The analysis of the experimental
results is presented and the physical processes responsible for the observed degradation at different stress conditions are studied by means
of 2D ATLAS-SILVACO simulations. The RF performance degradation of hot-carrier effects power RF LDMOS transistors can be
explained by the