文档介绍：High Aspect Ratio TSV Copper Filling with Different Seed Layers
M. Jürgen Wolf, Thomas Dretschkow2, Bernhard Wunderle, Nils Jürgensen, Gunter Engelmann, Oswin Ehrmann,
Albrecht Uhlig2, Bernd Michel, Herbert Reichl1
Fraunhofer Institute for Reliability and Microintegration (IZM), Germany
1 Technical University Berlin, Germany
2 Atotech Deutschland GmbH, Germany
Abstract Post Front-end TSV Process flow
The paper addresses the through silicon via (TSV) filling An ECD TSV filling process, based on Atotech’s
using electrochemical deposition (ECD) of copper. The SPHEROLYTE Cu 200 product family was integrated into
impact of seed layer nature on filling ratio and void formation the Fraunhofer IZM post front-end 3D TSV process. The
will be discussed with respect to via diameter and via depth. generic process flow is briefly described based on the
Based on the Spherolyte Cu200 the electrolyte for the copper realization of a silicon interposer with TSV [5].
electrochemical deposition was modified for good filling First, the high aspect ratio vias are formed by RIE (Figure
behavior. Thermomechanical modeling and simulation was 1a) using a so called Bosch-Process [3, 4] with a photo resist
performed for reliability assessment. mask. For sidewall insolation of the vias a thermal oxidation
can be performed or a CVD oxide [1, 2] is used. For the s