文档介绍：Chapter 4
Detailed Study of mon-Source
LNA with Inductive Degeneration
Introduction
The operation of the CS LNA with inductive degeneration has been explained in Section .
A very rudimentary performance model has been introduced. Equations have been developed
describing the behavior of the most important performance parameters within the design space
of the amplifying transistor. Contour plots have been used to illustrate and clarify the behavior.
parison was made with the CG LNA and the shunt-feedback LNA. In this chapter, this
understanding will be broadened to incorporate the effect of non-idealities.
These non-idealities will be introduced gradually in order to elucidate their particular inﬂu-
ence on the LNA performance. The ﬁrst and very important non-ideality is the presence of the
non-quasi static gate resistance. Its inﬂuence is investigated in Section . Another extremely
important parasitic isthe input capacitance. The inﬂuence of this capacitance isof the upmost
importance for the input ESD design and will force the designer to seek out alternatives as will be
explained in Chapter 5. The role of the parasitic input capacitance is investigated in Section .
The inﬂuence of the Miller effect on the performance is explained in Section . Section
elaborates on therelated optimization of the cascode transistor. Theeffect of the non-linearity
of the output capacitance is discussed in Section . In Section the impact of a ﬁnite input
match on the overall LNA performance is studied. Several aspects of the loadimpedance and
output matching topologies are consideredin Section . Section discusses theLNAband-
width requirements. The most important layout aspects ofintegratedlow-noise ampliﬁers are
treatedin Section . Thischapter concludes in Section with a more parison
with mon-gate ampliﬁer inorder to predict future trends.
The Non-Quasi Static Gate Resistance
The non-quasi static gate resistanc