文档介绍：372 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 2, FEBRUARY 2003
Hot-Hole-Induced Dielectric Breakdown
in LDMOS Transistors
Lorenzo Labate, Stefano Manzini, and Raffaella Roggero
Abstract—A novel failure mechanism in an n-channel lateral
double-diffused metal–oxide-semiconductor (LDMOS) transistor
biased in the saturation mode is investigated. A correlation be-
tween time-to-breakdown and hot hole gate current is established
and the static safe operating area (SOA), limited by hot-hole-in-
duced dielectric breakdown, is defined. A method based on the
evaluation of the time integral of an “effective” hot-hole gate cur-
rent is proposed which allows us to estimate the time-to-fail of the
device operating in any dynamic (periodic) mode, beyond its static
SOA. The prebreakdown degradation of some electrical parame-
ters, attributed to hot hole injection into the gate oxide, is also dis-
cussed.
Index Terms—Dielectric breakdown, hot carrier injection, lat- Fig. 1. Schematic vertical section of the lateral DMOS transistor in the active
eral double-diffused metal–oxide-semiconductor (LDMOS). area. Continuous lines in silicon indicate metallurgic junctions. Dashed lines in
silicon indicate regions of high gradient of doping concentration.
I. INTRODUCTION to dynamic (periodic) drain/gate stress is given. The method,
ATE oxide breakdown induced by hot