文档介绍：ARTICLE IN PRESS
Microelectronics Journal 38 (2007) 164–170
ate/mejo
Reliability study of power RF LDMOS device under thermal stress
. Belaı¨dÃ, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, J. Marcon
LEMI, University of Rouen, IUT Rouen, 76821, Mont Saint Aignan, France
Received 6 January 2006; received in revised form 27 July 2006; accepted 17 August 2006
Available online 10 October 2006
Abstract
This paper presents the results parative reliability study of two accelerated ageing tests for thermal stress applied to power RF
LDMOS: Thermal Shock Tests (TST, air–air test) and Thermal Cycling Tests (TCT, air–air test) under various conditions (with and
without DC bias, TST cold and hot, different extremes temperatures DT). The investigation findings of electrical parameter degradations
after various ageing tests are discussed. On-state resistance (Rds_on) is reduced by 12% and feedback capacitance (Crss) by 24%. This
means that the tracking of these parameters enables to consider the hot carrier injection as dominant degradation phenomenon. To reach
a better understanding of the physical mechanisms of parameter’s shift after thermal stress, a numerical device model (2D, Silvaco-Atlas)
was used to confirm degradation phenomena.
r 2006 Elsevier Ltd. All rights reserved.
Keywords: Simulation; Hot carrier effects; LDMOS; Thermal stress
1. Introduction lit