文档介绍:该【CMOS工艺流程讲解 】是由【孔乙己】上传分享,文档一共【50】页,该文档可以免费在线阅读,需要了解更多关于【CMOS工艺流程讲解 】的内容,可以使用淘豆网的站内搜索功能,选择自己适合的文档,以下文字是截取该文章内的部分文字,如需要获得完整电子版,请下载此文档到您的设备,方便您编辑和打印。CMOS工艺流程讲解
CMOS
LOCOSIsolation
siliconsubstrate
p-well
n-well
DepositResist
UVExposure
DevelopResist
FieldImplantB
RemoveResist
GrowFieldOxide
Fox
RemoveNitride
RemoveOxide
siliconsubstrate
p-well
n-well
GrowScreenOxide
CMOS
TransistorFabrication
VtImplant
DepositResist
UVExposure
DevelopResist
PunchthroughImplant
RemoveResist
RemoveOxide
Fox
siliconsubstrate
p-well
n-well
GrowGateOxide
CMOS
TransistorFabrication
DepositPolySi
PolySiImplant
polySi
polySi
DepositResist
UVExposure
DevelopResist
EtchPolySi
RemoveResist
Fox
siliconsubstrate
p-well
n-well
CMOS
TransistorFabrication
DepositThinOxide
DepositResist
UVExposure
DevelopResist
n-LDDImplant
RemoveResist
Fox
polySi
polySi
siliconsubstrate
p-well
n-well
CMOS
TransistorFabrication
DepositResist
UVExposure
DevelopResist
p-LDDImplant
RemoveResist
DepositSpacerOxide
EtchSpacerOxide
Fox
polySi
polySi
siliconsubstrate
p-well
n-well
CMOS
TransistorFabrication
DepositResist
UVExposure
DevelopResist
n+S/DImplant
n+
n+
RemoveResist
Fox
polySi
polySi
siliconsubstrate
p-well
n-well
CMOS
TransistorFabrication
DepositResist
UVExposure
DevelopResist
p+S/DImplant
p+
p+
RemoveResist
Fox
polySi
polySi
n+
n+
siliconsubstrate
p-well
n-well
CMOS
Contacts&Interconnects
DepositBPTEOS
BPTEOS
BPSGReflow
PlanarizationEtchback
DepositResist
UVExposure
DevelopResist
ContactEtchback
RemoveResist
Fox
polySi
polySi
n+
n+
p+
p+
siliconsubstrate
p-well
n-well
CMOS
Contacts&Interconnects
DepostMetal1
Metal1
DepositResist
UVExposure
DevelopResist
EtchMetal1
RemoveResist
Fox
polySi
polySi
p+
p+
n+
n+
BPTEOS