文档介绍：GaN基半导体光伏电池的制备和特性研究
蔡晓梅1, 张江勇2,吕雪芹3,应磊莹2,张保平2*
( 1集美大学理学院物理系,福建厦门,361021,2厦门大学信息学院电子系,3厦门大学萨本栋微纳米技术研究院,厦门,361005 )
*通信作者:******@xmu., 基金项目:国家自然科学基金(61404059,61274052),集美大学科研启动金(ZQ2013011)
摘要:本研究制备了三种低In组分的InGaN p-i-n同质结太阳能电池,均显示良好的光伏响应特性,并对电池开路电压随In组分增大而急剧下降的内在机理作深入分析。而后,改进外延结构采用相同工艺制作InGaN p-i-n异质结太阳能电池,并与同质结电池进行了对比分析,提出异质结是InGaN电池结构的较好选择。为了扩展太阳光的吸收范围,制作了InGaN多量子阱结构电池,指出合理设计器件结构是今后研究的关键,为进一步的研究发展提供思路。
关键词:InGaN;太阳能电池;结构
Fabrication and Characteristics of GaN-based Solar Cells
CAI Xiao-mei1, ZHANG Jiang-yong2, LV Xue-qin3, YING Lei-ying2, ZHANG Bao-ping2*
(1 Department of Physics, School of Science, Jimei University, Xiamen, China,
2 Department of Electronic Engineering, Xiamen University, Xiamen, China,
3Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China)
Abstract:Three kinds of InxGa1-xN p-i-n homojunction (HOJ) solar cells (SCs) paratively low In contents are fabricated and demonstrated to show excellent photo-response characteristics. Possible mechanisms for the dramatic decrease of open-circuit voltage (Voc) with increasing In content are discussed. parison, heterojunction (HEJ) SCs are also fabricated and investigated. paring HOJ and HEJ SCs, we proposed that HEJ structure is a better candidate for InGaN SCs.
In order to broaden the response range to the solar spectrum, SCs with InGaN/GaN multiple quantum well (MQW) as the absorption region is proposed and optimal design of the device structure is found to be of great importance. These results provide useful references for the future research.
Key words:InGaN;solar cell;structure
单晶Si太阳能电池已得到广泛的应用,其工业转换效率约20%(太阳能电池的转换效率定义为其最大输出功率与入射到表面的总光功率之比),然而由于材料特性上的限制,晶体Si电池的效率基本已达到极限,进一步提升空间很有限,难度也很大。根据理论计算单晶Si电池的极限效率也只有30%,因此Si材料很难在高效率太阳能电池方面发展。目前,高效太阳能电池主要为第二代半导体InGaAsP系列材料,且已在航空航天工业中得到广泛应用,%。为了取得更高的转换效率,必须利用不同带隙材料制作多结太阳能电池,使其每一结子电池吸收相应的太阳光。当前,效率最高的InGaP/GaAs/InGaAs[1],GaInP/GaInAs/Ge[2]和GaInP/GaAs/GaInNAs[3]三结电池,%~44%