文档介绍：Helsinki University of Technology
anic Chemistry Publication Series
Espoo 2006 No. 6
ATOMIC LAYER DEPOSITION OF LANTHANIDE OXIDE
THIN FILMS
Jani Päiväsaari
Dissertation for the degree of Doctor of Science in Technology to be presented with due
permission of the Department of Chemical Technology for public examination and debate in
Auditorium V1 at Helsinki University of Technology (Espoo, Finland) on the 19th of May, 2006,
at 12 noon.
Helsinki University of Technology
Department of Chemical Technology
Laboratory of anic and Analytical Chemistry
Teknillinen korkeakoulu
Kemian tekniikan osasto
aanisen ja analyyttisen kemian laboratorio
Distribution:
Helsinki University of Technology
Laboratory of anic and Analytical Chemistry
. Box 6100
FIN-02150 TKK, FINLAND
© Jani Päiväsaari
ISBN 951-22-8163-5
ISSN 1458-5154
Otamedia Oy
Espoo 2006
ABSTRACT
This thesis describes the processing of thin films of lanthanide (Ln) oxides by atomic
layer deposition (ALD) technique. Deposition of all binary lanthanide oxides was
studied, excluding terbium oxide and the unstable promethium oxide. In addition,
gadolinium oxide-doped cerium dioxide films were grown bining the
respective binary processes developed in this work. Films were characterized by a
wide range of analytical techniques for structural, compositional, electrical, and
surface properties. As background for the study, some promising application areas
for lanthanide and rare earth (RE) oxide thin films are briefly introduced, and the
ALD technique is explained. Reported ALD processes for RE oxides are then
reviewed.
Ln(thd)3 and ozone were essfully utilized for deposition of most members of the
Ln2O3 series. The deposited films were nearly stoichiometric Ln2O3 with only low
concentrations of carbon, hydrogen, and fluorine impurities. Films were also uniform
and smooth. Relative perm